Latest Market Research Report 2025

  The global gallium nitride (GaN) semiconductor devices market was valued at approximately USD 2.56 billion in 2023, with an anticipated compound annual growth rate (CAGR) of 26.4% from 2024 to 2030. This impressive growth trajectory can be attributed to GaN’s unique advantages in electronic applications, including high-speed performance and efficiency in reducing carbon emissions. As a wide-bandgap material, GaN allows semiconductor devices to operate at higher voltages, frequencies, and temperatures, which not only enables compact device designs but also provides superior handling of large electric fields. This makes GaN an essential component for high-performance electronic systems, particularly where speed and energy efficiency are paramount. The automotive industry is undergoing a major shift towards electrification, and GaN semiconductor devices are emerging as critical enablers of this transformation. GaN’s high efficiency and power-handling capabilities are especially adva...

The global gallium nitride (GaN) semiconductor devices market was valued at USD 2.56 billion in 2023 and is expected to experience robust growth with a projected compound annual growth rate (CAGR) of 26.4% from 2024 to 2030. This significant growth can be attributed to GaN's unique properties, such as its ability to deliver high-speed performance, manage larger electric fields, and contribute to lower carbon emissions. These characteristics make GaN semiconductor devices highly effective in a wide range of electronic applications, particularly in sectors where performance, efficiency, and sustainability are critical. A key factor driving the widespread adoption of GaN technology is its wide band gap of approximately 3.4 eV, which is significantly larger than the 1.2 eV band gap of traditional silicon-based devices. This wider band gap allows GaN devices to operate at higher voltages and temperatures while maintaining superior efficiency. Furthermore, GaN technology offers a higher ...

  Gallium Nitride Semiconductor Devices Industry Overview The global gallium nitride semiconductor devices market size was valued at USD 1.88 billion in 2021 and is expected to expand at a compound annual growth rate (CAGR) of 24.4% from 2022 to 2030.   The growth of the market can be attributed to the advantages offered by GaN semiconductor devices over silicon devices. Silicon materials have been used for manufacturing electronic devices such as smartphones, computers, cameras, and televisions. However, the slowdown in potential innovative properties of silicon created an opportunity for GaN semiconductor devices, which are 100 times faster than silicon. The advantages offered by GaN over silicon devices include higher energy efficiency, lower costs, and faster device speed, among others.   The growing number of electric vehicles worldwide is anticipated to drive the market. This is because GaN enables automakers to reduce vehicle charging time, improve c...